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Submit a ProposalMicroelectronics
One Line Description
Unlock the future of nanotechnology with this essential guide, which provides an exhaustive exploration of solutions to overcome the physical limits of silicon and optimize the performance of next-generation nanoscale semiconductor devices.
Audience
Researchers, academics, and industry professionals working with 2D materials, microelectronics, modern FETs, semiconductor design, More-Moore devices, and nanotechnology.
Researchers, academics, and industry professionals working with 2D materials, microelectronics, modern FETs, semiconductor design, More-Moore devices, and nanotechnology.
Description
As the role of microelectronics grows in today’s world, there is a need for new material solutions that move away from the limited conductivity of silicon to improve the electronic properties in nanoscale semiconductor devices. This unique guide exhaustively explores a number of topics, including 2D materials, microelectronic devices, large VLSI circuit design, and leakage mitigation techniques. The book showcases in-depth analyses of microelectronic device structures and their applications, properties, and characterization. With its easy-to-understand approach, this book is an excellent resource for novices and experts alike.
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As the role of microelectronics grows in today’s world, there is a need for new material solutions that move away from the limited conductivity of silicon to improve the electronic properties in nanoscale semiconductor devices. This unique guide exhaustively explores a number of topics, including 2D materials, microelectronic devices, large VLSI circuit design, and leakage mitigation techniques. The book showcases in-depth analyses of microelectronic device structures and their applications, properties, and characterization. With its easy-to-understand approach, this book is an excellent resource for novices and experts alike.
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Author / Editor Details
Balwinder Raj, PhD is an Associate Professor and an Associate Dean of Academics at the National Institute of Technology Jalandhar with more than 15 years of teaching and research experience. He has authored and co-authored eight books, 15 book chapters, and more than 150 research papers in peer-reviewed national and international journals and conferences. His areas of interest include classical and non-classical nanoscale semiconductor device modeling, nanoelectronics, FinFET-based memory design, and low-power VLSI design.
Balwinder Raj, PhD is an Associate Professor and an Associate Dean of Academics at the National Institute of Technology Jalandhar with more than 15 years of teaching and research experience. He has authored and co-authored eight books, 15 book chapters, and more than 150 research papers in peer-reviewed national and international journals and conferences. His areas of interest include classical and non-classical nanoscale semiconductor device modeling, nanoelectronics, FinFET-based memory design, and low-power VLSI design.
Koushik Guha, PhD is an Associate Professor and Head of the Department of Electronics and Communication Engineering at the National Institute of Technology Silchar. He has published more than 200 papers in international journals and conferences of repute, 35 book chapters, and two books. His current research interests include mimicking human body functions using micro-electro-mechanical systems (MEMS) technology, MEMS energy harvesting, design and development of smart sensors for IoT, and VLSI circuit design and optimization.
Shiromani Balmukund Rahi, PhD is an Assistant Professor in the School of Information and Communication Technology at Gautam Buddha University. He has published 25 research articles, two conference proceedings, 25 book chapters for various book projects, and seven books. His research focuses on the development of ultra-low power devices such as tunnel FETs and negative capacitance FETs.
Jyoti Kandpal, PhD is an Assistant Professor in the Department of Electronics and Communication Engineering at Graphic Era Hill University. She has more than 40 publications to her cresit in international journals and conferences. Her research interests include low-power VLSI design and high-performance digital circuit design.
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Table of Contents
Preface
Acknowledgment
1. 2D Materials for Microelectronic Devices
Shasi Sarmah, Krishanku Upamanyu, Nilpawan Sarma, Hirendra Das
and Pranjal Saikia
1.1 Introduction
1.2 Fundamental Properties of 2D Materials
1.2.1 Graphene
1.2.2 Hexagonal Boron Nitride (h-BN)
1.2.3 Transition Metal Dichalcogenides (TMDs)
1.2.4 Borophene
1.2.5 Phosphorene
1.2.6 Silicene
1.2.7 Germanene
1.2.8 MXenes
1.3 Synthesis and Fabrication Techniques
1.3.1 Mechanical Exfoliation
1.3.2 Chemical Vapor Deposition
1.3.3 Liquid Phase Exfoliation
1.3.4 Molecular Beam Epitaxy
1.3.5 Fabrication Techniques
1.4 Microelectronic Devices Based on 2D Materials
1.4.1 Transistors
1.4.2 Memory Devices
1.4.3 Sensors
1.4.4 Optoelectronic Devices
1.5 Conclusion and Future Prospects
References
2. Microelectronic Devices
Bidhan Pramanick and Anto Manuel
2.1 Introduction
2.2 Microelectronic Devices for Gas Sensor
2.3 Microelectronic Devices for Biosensor
2.4 MEMS-Based Sensors
2.5 Microelectronic Packaging
2.6 Various Microelectronic Devices for Distinct Uses
2.7 Summary
References
3. Insights Review of Microelectronic Devices
Rambabu Kusuma and Roshan Bodile
3.1 Simulations of Microelectronic Devices
3.2 FinFET
3.3 Tunnel FET
3.4 Nanowire-FET
3.5 Nanosheet FET
3.6 FeFET
3.7 NCFET
3.8 Planar and Vertical Nano-FET Structures
References
4. Novel Devices with Carbon and Graphene
M. Vinoth
4.1 Introduction
4.1.1 Overview of Carbon and Graphene
4.1.2 Carbon-Based Materials
4.1.3 Importance of Graphene in Modern Technology
4.2 Graphene and Carbon’s Properties
4.2.1 Structural Characteristics
4.2.2 Electrical and Thermal Conductivity
4.2.3 Mechanical Strength
4.2.4 Optical Properties
4.3 Carbon and Graphene Synthesis
4.3.1 Chemical Vapor Deposition
4.3.2 Mechanical Exfoliation
4.3.3 Reduction of Graphene Oxide
4.3.4 Exfoliation in Liquid Phase
4.3.5 Silicon Carbide (SiC) Epitaxial Growth
4.3.6 Plasma-Enhanced Chemical Vapor Deposition
4.4 Carbon-Based Devices
4.4.1 Carbon Nanotubes in Electronics
4.4.2 Carbon-Based Transistors and FETs
4.4.3 Energy Storage Devices (Batteries, Supercapacitors)
4.4.4 Carbon Sensors and Actuators
4.5 Graphene-Based Devices
4.5.1 Graphene Transistors and FETs
4.5.2 Graphene for Energy Harvesting and Storage
4.5.3 Graphene Photodetectors and Optoelectronics
4.5.4 Graphene-Based Flexible Electronics
4.6 Comparative Study of Carbon Nanotube and Graphene-Based Devices
4.7 Applications of Carbon and Graphene in Novel Devices
4.7.1 Wearable Electronics
4.7.2 Biomedical Applications
4.7.3 Environmental Sensors and Water Purification
4.7.4 Energy Harvesting and Solar Cells
4.7.5 Quantum Computing and Advanced Memory Devices
4.8 Challenges and Future Directions
4.8.1 Production Scalability and Cost
4.8.2 Integration with Current Technology
4.8.3 Environmental and Safety Concerns
4.8.4 Future of Carbon and Graphene in Electronics
4.9 Conclusion
4.9.1 Summary of Key Points
4.9.2 Potential of Carbon and Graphene in Future Technologies
References
5. Carbon and Graphene Devices with Applications
R. Suba Lakshmi, S. Aditya and R. Aarthi
5.1 Introduction
5.2 Carbon: Advantages and Properties
5.2.1 Advantages of Carbon
5.2.2 Properties of Carbon
5.3 Graphene: Advantages and Properties
5.3.1 Advantages of Graphene
5.3.2 Properties of Graphene
5.4 Novel Device Structures Based on Carbon
5.4.1 Carbon Nanotube FETs (CNTFETs)
5.4.2 Carbon-Based Sensors
5.4.3 Carbon-Based Solar Cells
5.4.4 Carbon-Based Energy Storage Devices
5.4.5 Carbon-Based Memristors
5.5 Novel Device Structures Based on Graphene
5.5.1 Graphene Transistors
5.5.2 Graphene-Based Sensors
5.5.3 Graphene-Based Memory Devices
5.5.4 Graphene-Based Solar Cells
5.5.5 Graphene-Based Quantum Devices
5.6 Fabrication and Integration Challenges
5.7 Future Outlook
5.8 Conclusion
5.9 Summary
References
6. III–V Compound Semiconductor Devices
Priyanka Chetia, Hirendra Das and Pranjal Saikia
6.1 Introduction
6.2 Properties of III–V Compound Semiconductors
6.3 Fabrication Processes
6.4 Applications of III–V Compound Semiconductors
6.5 Optoelectronic Devices
6.6 Challenges and Future Prospects
6.7 Conclusion
References
7. Dopingless Heterojunction Tunnel FET and its Application
Basudha Dewan
7.1 Introduction
7.1.1 New Approaches for Upcoming Technology Generations
7.2 Tunnel FET Technology: State of the Art
7.2.1 Band-to-Band Tunneling Current
7.3 Device Design and Simulation Methodologies
7.4 Results and Discussions
7.5 Conclusion
References
8. Silicon Nanowire Field Effect Transistor and Its Applications
Mekonnen Getnet Yirak and Rishu Chaujar
8.1 Introduction
8.2 Multi-Gate Device
8.3 Advanced GAAFET Technology
8.4 Triple-Gate Optimization Junctionless Cylindrical SiNWFET-Based Uricase and ChOx Biosensor Device
8.5 Results and Discussion of Advanced Triple SiNW GAAFET Device
8.6 Conclusion
References
9. Impact of Material and Structural Engineering in Double-Gate Junction Underlap Dual-Gate FinFETs
Manaswini Mishra and Ananya Dastidar
9.1 Background
9.2 Structure and Simulation of a 2D FinFET
9.3 Setup of the Simulation
9.4 Submicron Effects
9.5 Impact of Different Oxide Materials
9.6 Structural Engineering
9.7 Applications of Double-Gate FinFETs Based on Design Variations
9.8 Summary
References
10. Nanoelectronic System Design for RF Energy Harvesting
Manash Pratim Sarma and Kandarpa Kumar Sarma
10.1 Introduction
10.2 RF Energy Harvesting: Basic Design Perspectives
10.3 Design of Microelectronic Systems for RF Energy Harvesting
10.3.1 Rectifier Design Perspectives
10.3.2 Power Management Unit: Aspects of Design
10.4 Nanoelectronic Systems for RFEH
10.4.1 Nanomaterials for RFEH: Design of Devices and Detectors
10.4.2 Nano-EH: The Future of RF Energy Harvesting
10.5 Conclusion
References
11. Fin Field-Effect Transistor-Based Digital Logic Circuits Using 7-nm Regime
Sarika M. Jagtap, Viraj R. Sonawane, Bhushankumar N. Shinde, Rasika M. Chandramore and Dyaneshwar D. Ahire
11.1 Introduction
11.1.1 Fin-FET Device: Scaling
11.2 Literature Overview
11.3 Fin-FET-Based Digital Circuits
11.4 Conclusion
11.5 Summary of Chapter
References
12. MEMS Sensors and Its Applications
Shaveta, R. K. Bhan and Rishu Chaujar
12.1 Introduction and Scope
12.2 MEMS Sensor Development and Fabrication Process
12.3 Applications
12.4 Market Analysis and Key Players
12.5 MEMS Sensor’s Working Principle
12.6 MEMS Sensors—Principle, Structural Design, and Applications
12.7 Packaging Challenges in MEMS Sensors
12.8 Future Scope
12.9 Summary
Acknowledgments
References
13. Investigation of MEMS Sensors and Applications
Amuthameena S., Vaishnavi R., Gayathri G. and Karlyn Cynthia F.M.
13.1 Introduction
13.2 Classification of MEMS Sensors
13.3 MEMS Thermoelectric Infrared Sensors
13.4 MEMS Humidity Sensor
13.5 MEMS Electrochemical Vibration Sensor
13.6 MEMS Pressure Sensors
13.7 MEMS Sun Sensor
13.8 MEMS Technology for Sensing High-Voltage DC Artificial Electric Fields in Air
13.9 A Sensor for Hematology Analyzer Using MEMS Technology
13.10 Microelectromechanical System Gas Sensor Utilizing Carbon Nanotubes for Ionization
13.11 Uniform Mass Sensitivity in MEMS Vibrational Mass Sensors
13.12 Temperature Sensor Using MEMS-Based Platinum Film on an Alumina Substrate
13.13 Conclusion
References
14. Piezoelectric MEMS Sensors and its Applications
Tikendrajit Chetia and Bolin Chetia
14.1 Introduction
14.2 Fundamentals of Piezoelectric MEMS Sensors
14.3 Development of Piezoelectric Materials
14.4 Sensing Performance Criteria
14.5 Applications of Piezoelectric MEMS Gas Sensors
14.6 Challenges
14.7 Conclusion and Future Perspectives
References
15. Design Exploration of PVT-Tolerant Pre-Amplifiers for Seizure Monitoring
Sarin Vijay Mythry
15.1 Introduction
15.2 Methodology
15.3 Design Implementation Technique
15.4 Simulation Results
15.5 Conclusion
References
16. Advanced Electroencephalography and Its Influence on Neuroscience Applications
Sarin Vijay Mythry
16.1 Introduction
16.2 Comprehending Neurological Activities
16.3 Methodology
16.4 Circuit Diagram and Description
16.5 Design Specifications
16.6 Simulation and Results
16.7 Output Waveforms
16.8 Conclusion
References
17. Bridging Memory and Computation: Reimagining Digital Logics through Memristor Technology
Dayananda Singh Khwairakpam and Vandana Devi Wangkheirakpam
17.1 Introduction
17.2 IMPLY and FALSE
17.3 MAGIC
17.4 Ternary Logic
17.5 Decision Tree
17.6 Conclusion
References
18. Nanowire Synapse for Accelerating Neuromorphic Computing
Hemanta Kumar Mondal, Prasenjit Maji and Kunal Dhibar
18.1 Introduction
18.1.1 Neuromorphic Computing
18.1.2 Nanowire-FETs
18.2 Literature Review
18.3 Methodology
18.4 Challenges and Opportunities
18.5 Result and Discussion
18.6 Conclusion
References
About the Editors
Index
Back to Top
Preface
Acknowledgment
1. 2D Materials for Microelectronic Devices
Shasi Sarmah, Krishanku Upamanyu, Nilpawan Sarma, Hirendra Das
and Pranjal Saikia
1.1 Introduction
1.2 Fundamental Properties of 2D Materials
1.2.1 Graphene
1.2.2 Hexagonal Boron Nitride (h-BN)
1.2.3 Transition Metal Dichalcogenides (TMDs)
1.2.4 Borophene
1.2.5 Phosphorene
1.2.6 Silicene
1.2.7 Germanene
1.2.8 MXenes
1.3 Synthesis and Fabrication Techniques
1.3.1 Mechanical Exfoliation
1.3.2 Chemical Vapor Deposition
1.3.3 Liquid Phase Exfoliation
1.3.4 Molecular Beam Epitaxy
1.3.5 Fabrication Techniques
1.4 Microelectronic Devices Based on 2D Materials
1.4.1 Transistors
1.4.2 Memory Devices
1.4.3 Sensors
1.4.4 Optoelectronic Devices
1.5 Conclusion and Future Prospects
References
2. Microelectronic Devices
Bidhan Pramanick and Anto Manuel
2.1 Introduction
2.2 Microelectronic Devices for Gas Sensor
2.3 Microelectronic Devices for Biosensor
2.4 MEMS-Based Sensors
2.5 Microelectronic Packaging
2.6 Various Microelectronic Devices for Distinct Uses
2.7 Summary
References
3. Insights Review of Microelectronic Devices
Rambabu Kusuma and Roshan Bodile
3.1 Simulations of Microelectronic Devices
3.2 FinFET
3.3 Tunnel FET
3.4 Nanowire-FET
3.5 Nanosheet FET
3.6 FeFET
3.7 NCFET
3.8 Planar and Vertical Nano-FET Structures
References
4. Novel Devices with Carbon and Graphene
M. Vinoth
4.1 Introduction
4.1.1 Overview of Carbon and Graphene
4.1.2 Carbon-Based Materials
4.1.3 Importance of Graphene in Modern Technology
4.2 Graphene and Carbon’s Properties
4.2.1 Structural Characteristics
4.2.2 Electrical and Thermal Conductivity
4.2.3 Mechanical Strength
4.2.4 Optical Properties
4.3 Carbon and Graphene Synthesis
4.3.1 Chemical Vapor Deposition
4.3.2 Mechanical Exfoliation
4.3.3 Reduction of Graphene Oxide
4.3.4 Exfoliation in Liquid Phase
4.3.5 Silicon Carbide (SiC) Epitaxial Growth
4.3.6 Plasma-Enhanced Chemical Vapor Deposition
4.4 Carbon-Based Devices
4.4.1 Carbon Nanotubes in Electronics
4.4.2 Carbon-Based Transistors and FETs
4.4.3 Energy Storage Devices (Batteries, Supercapacitors)
4.4.4 Carbon Sensors and Actuators
4.5 Graphene-Based Devices
4.5.1 Graphene Transistors and FETs
4.5.2 Graphene for Energy Harvesting and Storage
4.5.3 Graphene Photodetectors and Optoelectronics
4.5.4 Graphene-Based Flexible Electronics
4.6 Comparative Study of Carbon Nanotube and Graphene-Based Devices
4.7 Applications of Carbon and Graphene in Novel Devices
4.7.1 Wearable Electronics
4.7.2 Biomedical Applications
4.7.3 Environmental Sensors and Water Purification
4.7.4 Energy Harvesting and Solar Cells
4.7.5 Quantum Computing and Advanced Memory Devices
4.8 Challenges and Future Directions
4.8.1 Production Scalability and Cost
4.8.2 Integration with Current Technology
4.8.3 Environmental and Safety Concerns
4.8.4 Future of Carbon and Graphene in Electronics
4.9 Conclusion
4.9.1 Summary of Key Points
4.9.2 Potential of Carbon and Graphene in Future Technologies
References
5. Carbon and Graphene Devices with Applications
R. Suba Lakshmi, S. Aditya and R. Aarthi
5.1 Introduction
5.2 Carbon: Advantages and Properties
5.2.1 Advantages of Carbon
5.2.2 Properties of Carbon
5.3 Graphene: Advantages and Properties
5.3.1 Advantages of Graphene
5.3.2 Properties of Graphene
5.4 Novel Device Structures Based on Carbon
5.4.1 Carbon Nanotube FETs (CNTFETs)
5.4.2 Carbon-Based Sensors
5.4.3 Carbon-Based Solar Cells
5.4.4 Carbon-Based Energy Storage Devices
5.4.5 Carbon-Based Memristors
5.5 Novel Device Structures Based on Graphene
5.5.1 Graphene Transistors
5.5.2 Graphene-Based Sensors
5.5.3 Graphene-Based Memory Devices
5.5.4 Graphene-Based Solar Cells
5.5.5 Graphene-Based Quantum Devices
5.6 Fabrication and Integration Challenges
5.7 Future Outlook
5.8 Conclusion
5.9 Summary
References
6. III–V Compound Semiconductor Devices
Priyanka Chetia, Hirendra Das and Pranjal Saikia
6.1 Introduction
6.2 Properties of III–V Compound Semiconductors
6.3 Fabrication Processes
6.4 Applications of III–V Compound Semiconductors
6.5 Optoelectronic Devices
6.6 Challenges and Future Prospects
6.7 Conclusion
References
7. Dopingless Heterojunction Tunnel FET and its Application
Basudha Dewan
7.1 Introduction
7.1.1 New Approaches for Upcoming Technology Generations
7.2 Tunnel FET Technology: State of the Art
7.2.1 Band-to-Band Tunneling Current
7.3 Device Design and Simulation Methodologies
7.4 Results and Discussions
7.5 Conclusion
References
8. Silicon Nanowire Field Effect Transistor and Its Applications
Mekonnen Getnet Yirak and Rishu Chaujar
8.1 Introduction
8.2 Multi-Gate Device
8.3 Advanced GAAFET Technology
8.4 Triple-Gate Optimization Junctionless Cylindrical SiNWFET-Based Uricase and ChOx Biosensor Device
8.5 Results and Discussion of Advanced Triple SiNW GAAFET Device
8.6 Conclusion
References
9. Impact of Material and Structural Engineering in Double-Gate Junction Underlap Dual-Gate FinFETs
Manaswini Mishra and Ananya Dastidar
9.1 Background
9.2 Structure and Simulation of a 2D FinFET
9.3 Setup of the Simulation
9.4 Submicron Effects
9.5 Impact of Different Oxide Materials
9.6 Structural Engineering
9.7 Applications of Double-Gate FinFETs Based on Design Variations
9.8 Summary
References
10. Nanoelectronic System Design for RF Energy Harvesting
Manash Pratim Sarma and Kandarpa Kumar Sarma
10.1 Introduction
10.2 RF Energy Harvesting: Basic Design Perspectives
10.3 Design of Microelectronic Systems for RF Energy Harvesting
10.3.1 Rectifier Design Perspectives
10.3.2 Power Management Unit: Aspects of Design
10.4 Nanoelectronic Systems for RFEH
10.4.1 Nanomaterials for RFEH: Design of Devices and Detectors
10.4.2 Nano-EH: The Future of RF Energy Harvesting
10.5 Conclusion
References
11. Fin Field-Effect Transistor-Based Digital Logic Circuits Using 7-nm Regime
Sarika M. Jagtap, Viraj R. Sonawane, Bhushankumar N. Shinde, Rasika M. Chandramore and Dyaneshwar D. Ahire
11.1 Introduction
11.1.1 Fin-FET Device: Scaling
11.2 Literature Overview
11.3 Fin-FET-Based Digital Circuits
11.4 Conclusion
11.5 Summary of Chapter
References
12. MEMS Sensors and Its Applications
Shaveta, R. K. Bhan and Rishu Chaujar
12.1 Introduction and Scope
12.2 MEMS Sensor Development and Fabrication Process
12.3 Applications
12.4 Market Analysis and Key Players
12.5 MEMS Sensor’s Working Principle
12.6 MEMS Sensors—Principle, Structural Design, and Applications
12.7 Packaging Challenges in MEMS Sensors
12.8 Future Scope
12.9 Summary
Acknowledgments
References
13. Investigation of MEMS Sensors and Applications
Amuthameena S., Vaishnavi R., Gayathri G. and Karlyn Cynthia F.M.
13.1 Introduction
13.2 Classification of MEMS Sensors
13.3 MEMS Thermoelectric Infrared Sensors
13.4 MEMS Humidity Sensor
13.5 MEMS Electrochemical Vibration Sensor
13.6 MEMS Pressure Sensors
13.7 MEMS Sun Sensor
13.8 MEMS Technology for Sensing High-Voltage DC Artificial Electric Fields in Air
13.9 A Sensor for Hematology Analyzer Using MEMS Technology
13.10 Microelectromechanical System Gas Sensor Utilizing Carbon Nanotubes for Ionization
13.11 Uniform Mass Sensitivity in MEMS Vibrational Mass Sensors
13.12 Temperature Sensor Using MEMS-Based Platinum Film on an Alumina Substrate
13.13 Conclusion
References
14. Piezoelectric MEMS Sensors and its Applications
Tikendrajit Chetia and Bolin Chetia
14.1 Introduction
14.2 Fundamentals of Piezoelectric MEMS Sensors
14.3 Development of Piezoelectric Materials
14.4 Sensing Performance Criteria
14.5 Applications of Piezoelectric MEMS Gas Sensors
14.6 Challenges
14.7 Conclusion and Future Perspectives
References
15. Design Exploration of PVT-Tolerant Pre-Amplifiers for Seizure Monitoring
Sarin Vijay Mythry
15.1 Introduction
15.2 Methodology
15.3 Design Implementation Technique
15.4 Simulation Results
15.5 Conclusion
References
16. Advanced Electroencephalography and Its Influence on Neuroscience Applications
Sarin Vijay Mythry
16.1 Introduction
16.2 Comprehending Neurological Activities
16.3 Methodology
16.4 Circuit Diagram and Description
16.5 Design Specifications
16.6 Simulation and Results
16.7 Output Waveforms
16.8 Conclusion
References
17. Bridging Memory and Computation: Reimagining Digital Logics through Memristor Technology
Dayananda Singh Khwairakpam and Vandana Devi Wangkheirakpam
17.1 Introduction
17.2 IMPLY and FALSE
17.3 MAGIC
17.4 Ternary Logic
17.5 Decision Tree
17.6 Conclusion
References
18. Nanowire Synapse for Accelerating Neuromorphic Computing
Hemanta Kumar Mondal, Prasenjit Maji and Kunal Dhibar
18.1 Introduction
18.1.1 Neuromorphic Computing
18.1.2 Nanowire-FETs
18.2 Literature Review
18.3 Methodology
18.4 Challenges and Opportunities
18.5 Result and Discussion
18.6 Conclusion
References
About the Editors
Index
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