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Submit a ProposalHandbook of Advanced Semiconductor Field Effect Transistors
One Line Description
Advance your understanding of semiconductor technology with this indispensable handbook, offering an in-depth look at the modeling, simulation, and fabrication of advanced nanoscale semiconductor field-effect transistors (FETs).
Audience
Electrical engineers, semiconductor physicists, students, and researchers specializing in the field of advanced FETs and professionals working in semiconductor device design, fabrication, and optimization.
Electrical engineers, semiconductor physicists, students, and researchers specializing in the field of advanced FETs and professionals working in semiconductor device design, fabrication, and optimization.
Description
Advanced nanoscale semiconductor field-effect transistors (FETs) represent a pivotal advancement in semiconductor technology, catering to the growing demand for energy-efficient low power electronic devices for emerging applications. This development has significantly impacted the electronics industry, particularly in the design and fabrication of integrated circuits for applications ranging from portable electronics to Internet of Things (IoT) devices. This book provides a comprehensive look at the modelling, simulation, characterization, and fabrication of modern semiconductor FET transistors to improve performance in terms of reduced weight and size, improved subthreshold characteristics and switching performance, and lower power consumption. Handbook of Advanced Semiconductor Field Effect Transistors provides deep insight into the evolving possibilities and challenges of emerging advanced nanoscale FETs. By focusing on the fundamentals of nanoscience and expert knowledge on advanced nanoscale semiconductors, this book serves as a well-rounded guide for novices and professionals looking to innovate in this growing field.
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Advanced nanoscale semiconductor field-effect transistors (FETs) represent a pivotal advancement in semiconductor technology, catering to the growing demand for energy-efficient low power electronic devices for emerging applications. This development has significantly impacted the electronics industry, particularly in the design and fabrication of integrated circuits for applications ranging from portable electronics to Internet of Things (IoT) devices. This book provides a comprehensive look at the modelling, simulation, characterization, and fabrication of modern semiconductor FET transistors to improve performance in terms of reduced weight and size, improved subthreshold characteristics and switching performance, and lower power consumption. Handbook of Advanced Semiconductor Field Effect Transistors provides deep insight into the evolving possibilities and challenges of emerging advanced nanoscale FETs. By focusing on the fundamentals of nanoscience and expert knowledge on advanced nanoscale semiconductors, this book serves as a well-rounded guide for novices and professionals looking to innovate in this growing field.
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Author / Editor Details
Ekta Goel, PhD is an assistant professor at the National Institute of Technology Warangal. She has published one book chapter and over 50 research articles in peer-reviewed journals and conferences. Her areas of research include modeling and simulation of advanced nanoscale MOS devices, VLSI circuit simulation, photodiodes, and photovoltaic cells.
Ekta Goel, PhD is an assistant professor at the National Institute of Technology Warangal. She has published one book chapter and over 50 research articles in peer-reviewed journals and conferences. Her areas of research include modeling and simulation of advanced nanoscale MOS devices, VLSI circuit simulation, photodiodes, and photovoltaic cells.
Archana Pandey, PhD is a senior assistant professor in the Department of Electronics and Communication Engineering at the Jaypee Institute of Information Technology. She has published numerous articles in peer-reviewed international journals and conferences. Her research areas include novel semiconductor devices, FinFETs, device modeling, delay modeling of digital circuit modules, VLSI device-circuit co-design, nanosheet FETs, and FET biosensors.
Shiromani Balmukund Rahi, PhD is an assistant professor at the Mahamaya College of Agriculture, Engineering, and Technology. He has published 25 research papers, two conference proceedings, and 20 book chapters in addition to editing seven books. His work focuses on the development of IoTs for smart applications ultra-low power devices such as tunnel FETs, negative capacitance FETs, and nanosheets.
Arun Samuel, PhD is a professor at the National Engineering College in Kovilpatti, India. He has over 90 publications to his credit and is a lifetime member of the Institute of Engineering and the Institute of Electrical and Electronics Engineers. His research interests include modelling and simulation of multi-gate transistors and tunnel field-effect transistors.
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Table of Contents
Preface
1. Semiconductor Reliability Analysis and Modeling
Reinhard S. Park
1.1 Introduction
1.2 History and Fundamental of Semiconductors
1.3 Brief Overview of Semiconductor Fabrication
1.3.1 Wafer Preparation
1.3.2 Photolithography
1.3.3 Etching
1.3.4 Doping
1.3.5 Deposition
1.3.6 Planarization
1.3.7 Metallization
1.3.8 Packaging
1.3.9 Testing
1.4 Definition and Explanation of Bathtub Curve
1.4.1 Infant Mortality Phase
1.4.2 Normal Life Phase
1.4.3 Wear-Out Phase
1.4.4 Applications in Semiconductor Reliability
1.5 Failure Mechanisms in Semiconductor
1.6 Failure Mechanism Modeling and Prediction
1.7 Design for Reliability Strategies for Semiconductor
1.7.1 Early Failure Analysis
1.7.2 Robust Design Techniques
1.7.3 Accelerated Testing and Modeling
1.7.4 Material Selection and Characterization
1.7.5 Redundancy and Fault Tolerance
1.7.6 Thermal Management
1.7.7 Process Control and Monitoring
1.7.8 Environmental Stress Screening
1.7.9 Reliability-Centered Maintenance
1.8 Conclusion
References
2. Unveiling the Potential of FinFETs: An Alternative Paradigm to MOSFET
Nitish Vashishth, Neha Goel and R. K. Yadav
2.1 Introduction to Transistor Technology
2.1.1 Introduction to FinFET
2.1.2 FinFET Structure
2.1.3 Types of FinFET
2.1.4 Symbols of FinFETs
2.2 Implementation of Inverters and NAND Gates Using FinFETs
2.2.1 SG/IG-FinFET Based Inverters
2.2.2 SG/IG-FinFET Based 2-Input NAND Gates
2.2.3 Asymmetric Shorted Gate FinFET Based Logic Gates
2.3 Implementation of Latches and Flip-Flops Using FinFETs
2.4 Implementation of SRAM Using FinFETs
2.5 Implementation of DRAM Using FinFETs
2.6 Challenges and Limitations of FinFET Technology
2.7 Potential Future Developments in FinFET Technology
2.8 Conclusion
References
3. Prospects of Negative-Capacitance Ferroelectric Field-Effect Transistors in Low-Power Electronics and Beyond
Ningombam Ajit Kumar, Khuraijam Nelson Singh, Sisira Hawaibam, Sushmita Dandeliya and Sonal Agrawal
3.1 Introduction
3.1.1 Overview of Negative Capacitance Ferroelectric FET Technology
3.1.2 Research Evolution of Negative Capacitance FET and its Significant Milestones
3.2 The Fundamentals of Negative Capacitance Ferroelectric FET
3.2.1 Concept of Negative Capacitance
3.2.2 Working Principle, Operation, and its Advantages
3.2.3 Various Structures and Materials Employed for Achieving Negative Capacitance
3.3 Modeling
3.3.1 Modeling Approach
3.4 Applications
3.4.1 Low-Power Electronics
3.4.2 Potential Application in Memory Devices and Beyond
3.5 Performance Optimization and Challenges
3.5.1 Approaches for Enhancing Performance
3.5.2 Challenges
3.6 Comparative Analysis with Other Transistor Technologies
3.6.1 NC-FeFET vs MOSFET
3.6.2 NC-FeFET vs TFET
3.7 Future Prospects and Trends
3.8 Summary
References
4. Unleashing the Potential of Negative Capacitance Field Effect Transistors: A Paradigm Shift in Low-Power Electronics
Malvika, Jagritee Talukdar, Bijit Choudhuri and Kavicharan Mummaneni
4.1 Introduction
4.1.1 Operating Mechanism of Negative Capacitance FET
4.2 A Brief Survey
4.3 Simulation Strategy of NCFET and its Application in Circuit
4.3.1 Device Structure
4.3.2 Simulation Methodology
4.4 Analysis of Device Performance and its Application as an Inverter
4.5 Conclusion
References
5. The Future of Low Power Electronics: Tunnel Field-Effect Transistors
Sourav Das, Ekta Goel and Kunal Singh
5.1 Introduction
5.2 Fundamental Principles of TFET Operation
5.2.1 Device Structure
5.2.2 Operation
5.2.3 Transfer Characteristics of TFET
5.2.4 Different Types of TFETs
5.2.5 Point Versus Line Tunneling
5.3 Applications of TFETs
5.3.1 Electrical Characteristics
5.3.2 Digital Circuits and Memories
5.3.3 Analog Circuits
5.3.4 Future Perception of TFETs in Circuits
5.4 Literature Review
5.5 Simulation of Dual Metal Double Gate Hetero Pocket V-TFET
5.5.1 Device Structure
5.5.2 Sample Output File
5.6 Conclusion
References
6. Novel Gate All Around FET with Enhanced Performance and Improved Process Sensitivity
Mandeep Singh Narula, Archana Pandey and Ajay Kumar
6.1 Introduction
6.2 Proposed Structure
6.3 Device Performance
6.4 Process Sensitivity
6.5 Conclusion
References
7. Rise of Tunnel FETs as a Revolutionary MOSFET Alternative
G. Munirathnam and Y. Murali Mohan Babu
7.1 Introduction to Tunnel FETs
7.1.1 Overview of Traditional FETs and Their Limitations
7.1.2 Introduction to Tunnel FETs as a Promising Alternative Transistor Technology
7.1.3 Historical Development and Milestones in TFET Research
7.2 Working Principles of Tunnel FETs
7.2.1 Basic Principles of TFET Operation: Band-to-Band Tunneling Mechanism
7.2.2 Comparison of TFET Operation with Conventional FETs (MOSFETs)
7.2.3 Impact of Tunneling on Device Characteristics and Performance
7.3 TFET Device Structure and Fabrication
7.3.1 Overview of TFET Device Structure: Source, Drain, Channel, and Gate
7.3.2 Materials and Fabrication Techniques for TFETs
7.3.3 Challenges and Considerations in TFET Fabrication
7.4 TFET Performance Metrics
7.4.1 Metrics for Evaluating TFET Performance
7.4.2 Comparison of TFET Performance with MOSFETs and Emerging Transistor Technologies
7.4.3 Performance Trade-Offs
7.5 Applications of TFETs
7.6 Challenges and Future Directions
7.7 Case Studies and Practical Implementations
7.8 Conclusion
References
8. Tunnel Field Effect Transistors: Harnessing Light Sensitivity for Optical Sensing
Jagritee Talukdar, Malvika, Basab Das and Kavicharan Mummaneni
8.1 Introduction
8.2 A Brief Overview
8.3 Photo Sensing in TFETs: Principle of Operation and Geometry
8.4 Simulation Strategy for TFET-Based Photosensor
8.5 Sensitivity Parameters of Photosensor
8.6 An Extended Source TFET-Based Photosensor
8.7 Conclusion
References
9. 2D Material Based FET Sensors
Archana Pandey, Jyoti Pant, Medha Joshi, Nitanshu Chauhan and Mandeep Singh
9.1 Introduction
9.1.1 FET Operation
9.1.2 Sensing Response
9.1.3 Selectivity and Sensitivity
9.2 Properties and Applications of 2D Materials
9.3 Sensing Mechanisms
9.3.1 Gas Sensing
9.3.2 Biosensing
9.3.3 Environmental and Chemical Sensing
9.4 Challenges and Future Directions
9.4.1 Challenges
9.4.1.1 Sensitivity and Specificity
9.4.1.2 Stability and Reliability
9.4.1.3 Scalability and Miniaturization and Integration
9.4.1.4 Biocompatibility
9.4.2 Future Scope
9.5 Conclusion
References
10. 2D Material-Based FETs for Next Generation Integrated Circuits
Aruru Sai Kumar, V. Bharath Sreenivasulu, K. Sarangam, P. Ravi Sankar and K. Nishanth Rao
10.1 Introduction
10.2 Literature Survey
10.3 Proposed Methodology
10.4 Result Analysis
10.4.1 ID vs VGS
10.4.2 ID vs VDS
10.4.3 ION/IOFF
10.4.4 Electron Density per Sheet
10.4.5 Current Spectrum
10.4.6 Density Spectrum
10.5 Conclusion
Acknowledgments
References
11. MOSHEMT—Device Background, Materials, and Structures for Different Applications
Ananya Dastidar, Tapas Kumar Patra and Sushanta Kumar Mohapatra
11.1 Classical MOSFETs and their Issues
11.2 HEMT and Its Challenges
11.3 MOSHEMT
11.3.1 Working Principle
11.3.2 MOSHEMT Structure
11.3.3 Substrate
11.3.4 Gate Dielectric
11.3.5 Barrier
11.3.6 Other Layers
11.4 MOSHEMT Structural Engineering
11.4.1 Single Gate and Gate Stack MOSHEMT for RF Applications
11.4.2 Dual/Triple Gate and Recess Gate MOSHEMT for Power Electronic Applications
11.4.3 Asymmetric Gate MOSHEMT for High Frequency Applications
11.4.4 Double-Gate and Double-Channel MOSHEMT for Low Leakage Performance
11.4.5 Novel MOSHEMT Structures
11.5 MOSHEMT for Biosensing Applications
11.5.1 Biosensors
11.5.2 Biomarkers
11.5.3 Performance Metrics of Biosensors
11.5.4 Key Considerations for Biosensor Design
11.5.5 MOSHEMT-Based Biosensors
11.6 Summary
References
12. Quantum Computing and Digital Twins with Development of Semiconductor Field Effect Transistors
Shiromani Balmukund Rahi and Young Suh Song
12.1 Introduction to Quantum Computing: Concept, History, and Principles
12.2 Understanding Digital Twins
12.2.1 Definition and Conceptual Framework
12.2.2 Evolution of Digital Twin Technology
12.2.3 Types of Digital Twins
12.2.4 Challenges and Opportunities in Digital Twin Implementation
12.3 Semiconductor Development: Past, Present, and Future
12.4 Integration of Quantum Computing and Digital Twins
12.4.1 Synergies Between Quantum Computing and Digital Twin Technologies
12.4.2 Case Studies and Use Cases
12.4.3 Challenges and Solutions in Integration
12.4.4 Future Prospects and Possibilities
12.5 Applications and Impact Across Industries
12.6 Ethical and Societal Implications
12.7 Future Directions
12.7.1 Anticipated Developments in Quantum Computing and Digital Twins
12.7.2 Opportunities for Further Research and Collaboration
12.8 Conclusion
Acknowledgment
References
13. Low Voltage Circuit Design with FinFETs
Sarita Yadav and Nitanshu Chauhan
13.1 Introduction
13.2 Advent of FinFETs
13.3 Critical Device-Circuit Co-Design Challenges in Low-Voltage Domain for FinFETs
13.4 Inverter Capacitances in Low-Voltage Region of Operation
13.5 Minimum Supply Voltage for FinFET Logic Gates
13.6 Conclusion
References
14. A Novel Low-Power Approach of 8-Bit Vedic Multiplier Using Reversible Logic Gates
Aruru Sai Kumar, K. Sarangam, P. Ravi Sankar, K. Nishanth Rao and Yashika Gaidhani
14.1 Introduction
14.1.1 Fundamental Reversible Logic Gates
14.2 Literature Survey
14.3 Proposed Methodology
14.3.1 Reversible Full Adder
14.3.2 Ripple Carry Adder
14.3.3 Carry Look Ahead Adder
14.3.4 Proposed Reversible 8-Vedic Multiplier
14.3.4.1 2-Bit Vedic Multiplier
14.3.4.2 4-Bit Vedic Multiplier
14.3.4.3 8-Bit Vedic Multiplier
14.4 Result Analysis
14.5 Conclusion
References
15. 64-Bit High Speed Parallel Prefix Adder Architectures
B. Harish and M.S.S. Rukmini
15.1 Introduction
15.1.1 Introduction to Parallel Prefix Adders
15.1.2 Parallel Prefix Adders
15.2 Implementation of PPA in 64-Bit
15.2.1 Kogge-Stone Adder
15.2.2 Sparse Kogge Stone Adder
15.2.3 Spanning Tree Adder
15.2.4 Brent-Kung Adder
15.2.5 16-Bit Pipelined Brent-Kung Adder
Results and Discussion
Conclusion
References
16. Design and Implementation of High-Performance Adaptive Baud Rate Generator for IoT Applications
B. Harish, N. Jahnavi, M. Brammani, Md. Karishma and N. J. L. S. Manasa
16.1 Introduction
16.1.1 Overview of IoT Applications and Communication Requirements
16.1.2 Importance of Baud Rate Generation in IoT Devices
16.2 Fundamentals of Baud Rate Generation
16.2.1 Definition of Baud Rate
16.2.2 Significance of Baud Rate
16.2.3 Basics of Serial Communication Protocols
16.2.4 Role of Baud Rate Generators in Communication Systems
16.3 Requirements and Challenges in IoT Baud Rate Generation
16.3.1 Specific Demands of IoT Applications on Baud Rate Generation
16.3.2 Challenges in Designing High-Performance Adaptive Baud Rate Generators
16.3.3 Factors Influencing Baud Rate Stability and Accuracy in IoT Environments
16.4 State-of-the-Art Techniques in Baud Rate Generation
16.4.1 Review of Existing Baud Rate Generation Architecture
16.4.2 Adaptive Techniques for Baud Rate Adjustment
16.4.3 Techniques for Power Optimization in Baud Rate Generators
16.5 High-Performance Adaptive Baud Rate Generators
16.5.1 Introduction to Adaptive Baud Rate Generator (Proposed System)
16.5.2 Design Considerations and Constraints
16.5.3 Block Diagram
16.5.3.1 Working Principle of Adaptive Baud Rate Generator
16.6 Results and Discussion
16.6.1 Result for Baud Rate Generator (Existing System)
16.6.2 Result for Adaptive Baud Rate Generator (Proposed System)
16.6.3 Comparison Table
16.7 Future Directions and Challenges
16.8 Conclusion
References
17. Biomedical Applications in VLSI Field
Jyoti Kandpal, Divya Sharma and Ekta Goel
17.1 Introduction
17.2 Role of VLSI in Biomedical Application
17.3 Application
17.4 Conclusion
References
18. Self-Powered Biosensor Field-Effect Transistors
Archana Pandey and Shradha Saxena
18.1 Introduction to Biosensors
18.1.1 Definition and Importance
18.1.2 Overview of Traditional Biosensors
18.2 Field-Effect Transistor (FET)-Based Biosensors
18.2.1 Working Principle
18.2.2 Role of FET Configurations
18.2.3 Sensitivity and Selectivity
18.3 Label-Free Detection with FET Biosensors
18.3.1 Comparison with Traditional Methods
18.3.2 Rapid Response Times
18.3.3 Advantages in Biosensing
18.4 Need for Self-Powering Mechanisms in Biosensors
18.4.1 Challenges in Power Consumption
18.4.2 Limited Operational Lifetimes
18.4.3 Importance of Autonomous Operation
18.5 Energy Harvesting in Biosensor FET Technology
18.5.1 Piezoelectric Mechanisms
18.6 Applications of Self-Powered Biosensor FETs
18.7 Conclusion
References
19. Vertical Tunneling FETs (V-TFETs): A Novel Approach in Biosensing Technology
Sourav Das, Ekta Goel and Kunal Singh
19.1 Introduction
19.2 Types of Biosensors
19.3 Comparison of FET- and TFET-Based Biosensors
19.4 Dielectric Modulation in TFETs: Principle and Design
19.4.1 Working Principle
19.4.2 Design
19.5 Literature Review
19.6 Simulation Methodology for a DM TFET as a Label-Free Biosensor
19.7 Sensitivity Parameters
19.8 Non-Idealities in Dielectric-Modulated Biosensors
19.8.1 Steric Hindrance
19.8.2 Probe Placement
19.8.3 Fabrication Issues
19.9 Impact of Charged Biomolecules on Sensitivity
19.10 Device Architecture and Simulation of Model
19.11 Conclusion
References
20. Micro-Electromechanical System (MEMS) and Field-Effect Transistor (FET)–Coupled Sensors
Shradha Saxena and Archana Pandey
20.1 Introduction to Micro-Electromechanical System (MEMS)–Based Sensor
20.1.1 Definition and Importance of MEMS
20.1.2 Types of MEMS Sensors
20.1.3 Sensing Mechanisms of MEMS Sensors
20.1.3.1 Piezoresistive Sensing Mechanism
20.1.3.2 Capacitive Sensing Mechanism
20.1.3.3 Optical Sensing Mechanism
20.1.3.4 Piezoelectric and Thermal Sensing Mechanisms
20.2 Introduction to Field-Effect Transistor (FET)–Based Sensors
20.2.1 Different Configurations and Working Principle of FET Sensors
20.2.1.1 Top Gate Configuration
20.2.1.2 Side Gate Configuration
20.2.1.3 Extended Gate Configuration
20.2.1.4 Suspended Gate (SG) Configuration
20.2.1.5 Floating Gate (FG) Configuration
20.2.2 Sensing Mechanism in EG-FET Sensors
20.2.3 Limitation of FET-Based Sensors
20.3 Introduction of MEMS-FET Sensor
20.3.1 Advantages of MEMS (Sensing)–FET (Measuring) Sensors
20.3.2 Importance of Suspended Gate (SG) Architecture of FET in MEMS-FET Sensors
20.4 Applications of MEMS-FET Sensors
20.4.1 MEMS-FET–Based Gas Sensors
20.4.2 MEMS-FET–Based Accelerometer Sensors
20.4.3 MEMS-FET Force Sensor
20.4.4 MEMS-FET–Based Microphone
20.5 Self-Powered MEMS-FET Sensors
20.5.1 Self-Powered MEMS-FET–Based Biosensor
20.6 Future Direction and Challenges
20.7 Conclusion
References
21. Memory Design Using Conventional DRAM Unit Cell
Husien Salama, Zina Guesmi, Faouzi Nasri, Billel Smaani, Khalifa Ahmed Salama and Ahmed Gawa
21.1 Introduction
21.1.1 Definition and Basic Principles of DRAM
21.1.2 Historical Background and Development of DRAM Technology
21.1.3 Importance of DRAM in Modern Computing Systems
21.2 Conventional DRAM Unit Cell Structure
21.2.1 DRAM Unit Cell Operation
21.2.2 Overview of DRAM Unit Cell Components
21.2.3 Capacitor and Transistor in a DRAM Unit Cell
21.2.4 Functionality and Operation of a DRAM Unit Cell
21.2.5 Read-and-Write Operations
21.3 Design Considerations for Conventional DRAM
21.3.1 Cell Size and Density in DRAM Design
21.3.2 Read-and-Write Operations in DRAM
21.3.3 Reading Data from a DRAM Cell
21.3.4 Writing Data to a DRAM Cell
21.3.5 Refresh Mechanisms in DRAM
21.4 Challenges and Limitations of Conventional DRAM
21.4.1 Issues with Scaling Down DRAM Technology
21.4.2 Power Consumption and Heat Dissipation Challenges
21.4.3 Prospects and Potential Solutions
21.5 Conclusion and Future Directions
21.5.1 Summary of Key Points in DRAM Design
21.5.2 Emerging Trends in DRAM Technology Research
21.5.3 Potential Advancements and Innovations in DRAM Design
References
22. Ensuring Robustness: Reliability Analysis of 4H-SiC Trench MOSFETs in High-Performance Analog Applications
Ajay Kumar, Mandeep Singh Narula, Neha Gupta, Aditya Jain, Kaushal Kumar and Amit Kumar Goyal
22.1 Introduction
22.2 Device Design and Its Parameters
22.3 Methodology
22.4 Results and Discussion
22.5 Conclusion
References
About the Editors
Index
Back to Top
Preface
1. Semiconductor Reliability Analysis and Modeling
Reinhard S. Park
1.1 Introduction
1.2 History and Fundamental of Semiconductors
1.3 Brief Overview of Semiconductor Fabrication
1.3.1 Wafer Preparation
1.3.2 Photolithography
1.3.3 Etching
1.3.4 Doping
1.3.5 Deposition
1.3.6 Planarization
1.3.7 Metallization
1.3.8 Packaging
1.3.9 Testing
1.4 Definition and Explanation of Bathtub Curve
1.4.1 Infant Mortality Phase
1.4.2 Normal Life Phase
1.4.3 Wear-Out Phase
1.4.4 Applications in Semiconductor Reliability
1.5 Failure Mechanisms in Semiconductor
1.6 Failure Mechanism Modeling and Prediction
1.7 Design for Reliability Strategies for Semiconductor
1.7.1 Early Failure Analysis
1.7.2 Robust Design Techniques
1.7.3 Accelerated Testing and Modeling
1.7.4 Material Selection and Characterization
1.7.5 Redundancy and Fault Tolerance
1.7.6 Thermal Management
1.7.7 Process Control and Monitoring
1.7.8 Environmental Stress Screening
1.7.9 Reliability-Centered Maintenance
1.8 Conclusion
References
2. Unveiling the Potential of FinFETs: An Alternative Paradigm to MOSFET
Nitish Vashishth, Neha Goel and R. K. Yadav
2.1 Introduction to Transistor Technology
2.1.1 Introduction to FinFET
2.1.2 FinFET Structure
2.1.3 Types of FinFET
2.1.4 Symbols of FinFETs
2.2 Implementation of Inverters and NAND Gates Using FinFETs
2.2.1 SG/IG-FinFET Based Inverters
2.2.2 SG/IG-FinFET Based 2-Input NAND Gates
2.2.3 Asymmetric Shorted Gate FinFET Based Logic Gates
2.3 Implementation of Latches and Flip-Flops Using FinFETs
2.4 Implementation of SRAM Using FinFETs
2.5 Implementation of DRAM Using FinFETs
2.6 Challenges and Limitations of FinFET Technology
2.7 Potential Future Developments in FinFET Technology
2.8 Conclusion
References
3. Prospects of Negative-Capacitance Ferroelectric Field-Effect Transistors in Low-Power Electronics and Beyond
Ningombam Ajit Kumar, Khuraijam Nelson Singh, Sisira Hawaibam, Sushmita Dandeliya and Sonal Agrawal
3.1 Introduction
3.1.1 Overview of Negative Capacitance Ferroelectric FET Technology
3.1.2 Research Evolution of Negative Capacitance FET and its Significant Milestones
3.2 The Fundamentals of Negative Capacitance Ferroelectric FET
3.2.1 Concept of Negative Capacitance
3.2.2 Working Principle, Operation, and its Advantages
3.2.3 Various Structures and Materials Employed for Achieving Negative Capacitance
3.3 Modeling
3.3.1 Modeling Approach
3.4 Applications
3.4.1 Low-Power Electronics
3.4.2 Potential Application in Memory Devices and Beyond
3.5 Performance Optimization and Challenges
3.5.1 Approaches for Enhancing Performance
3.5.2 Challenges
3.6 Comparative Analysis with Other Transistor Technologies
3.6.1 NC-FeFET vs MOSFET
3.6.2 NC-FeFET vs TFET
3.7 Future Prospects and Trends
3.8 Summary
References
4. Unleashing the Potential of Negative Capacitance Field Effect Transistors: A Paradigm Shift in Low-Power Electronics
Malvika, Jagritee Talukdar, Bijit Choudhuri and Kavicharan Mummaneni
4.1 Introduction
4.1.1 Operating Mechanism of Negative Capacitance FET
4.2 A Brief Survey
4.3 Simulation Strategy of NCFET and its Application in Circuit
4.3.1 Device Structure
4.3.2 Simulation Methodology
4.4 Analysis of Device Performance and its Application as an Inverter
4.5 Conclusion
References
5. The Future of Low Power Electronics: Tunnel Field-Effect Transistors
Sourav Das, Ekta Goel and Kunal Singh
5.1 Introduction
5.2 Fundamental Principles of TFET Operation
5.2.1 Device Structure
5.2.2 Operation
5.2.3 Transfer Characteristics of TFET
5.2.4 Different Types of TFETs
5.2.5 Point Versus Line Tunneling
5.3 Applications of TFETs
5.3.1 Electrical Characteristics
5.3.2 Digital Circuits and Memories
5.3.3 Analog Circuits
5.3.4 Future Perception of TFETs in Circuits
5.4 Literature Review
5.5 Simulation of Dual Metal Double Gate Hetero Pocket V-TFET
5.5.1 Device Structure
5.5.2 Sample Output File
5.6 Conclusion
References
6. Novel Gate All Around FET with Enhanced Performance and Improved Process Sensitivity
Mandeep Singh Narula, Archana Pandey and Ajay Kumar
6.1 Introduction
6.2 Proposed Structure
6.3 Device Performance
6.4 Process Sensitivity
6.5 Conclusion
References
7. Rise of Tunnel FETs as a Revolutionary MOSFET Alternative
G. Munirathnam and Y. Murali Mohan Babu
7.1 Introduction to Tunnel FETs
7.1.1 Overview of Traditional FETs and Their Limitations
7.1.2 Introduction to Tunnel FETs as a Promising Alternative Transistor Technology
7.1.3 Historical Development and Milestones in TFET Research
7.2 Working Principles of Tunnel FETs
7.2.1 Basic Principles of TFET Operation: Band-to-Band Tunneling Mechanism
7.2.2 Comparison of TFET Operation with Conventional FETs (MOSFETs)
7.2.3 Impact of Tunneling on Device Characteristics and Performance
7.3 TFET Device Structure and Fabrication
7.3.1 Overview of TFET Device Structure: Source, Drain, Channel, and Gate
7.3.2 Materials and Fabrication Techniques for TFETs
7.3.3 Challenges and Considerations in TFET Fabrication
7.4 TFET Performance Metrics
7.4.1 Metrics for Evaluating TFET Performance
7.4.2 Comparison of TFET Performance with MOSFETs and Emerging Transistor Technologies
7.4.3 Performance Trade-Offs
7.5 Applications of TFETs
7.6 Challenges and Future Directions
7.7 Case Studies and Practical Implementations
7.8 Conclusion
References
8. Tunnel Field Effect Transistors: Harnessing Light Sensitivity for Optical Sensing
Jagritee Talukdar, Malvika, Basab Das and Kavicharan Mummaneni
8.1 Introduction
8.2 A Brief Overview
8.3 Photo Sensing in TFETs: Principle of Operation and Geometry
8.4 Simulation Strategy for TFET-Based Photosensor
8.5 Sensitivity Parameters of Photosensor
8.6 An Extended Source TFET-Based Photosensor
8.7 Conclusion
References
9. 2D Material Based FET Sensors
Archana Pandey, Jyoti Pant, Medha Joshi, Nitanshu Chauhan and Mandeep Singh
9.1 Introduction
9.1.1 FET Operation
9.1.2 Sensing Response
9.1.3 Selectivity and Sensitivity
9.2 Properties and Applications of 2D Materials
9.3 Sensing Mechanisms
9.3.1 Gas Sensing
9.3.2 Biosensing
9.3.3 Environmental and Chemical Sensing
9.4 Challenges and Future Directions
9.4.1 Challenges
9.4.1.1 Sensitivity and Specificity
9.4.1.2 Stability and Reliability
9.4.1.3 Scalability and Miniaturization and Integration
9.4.1.4 Biocompatibility
9.4.2 Future Scope
9.5 Conclusion
References
10. 2D Material-Based FETs for Next Generation Integrated Circuits
Aruru Sai Kumar, V. Bharath Sreenivasulu, K. Sarangam, P. Ravi Sankar and K. Nishanth Rao
10.1 Introduction
10.2 Literature Survey
10.3 Proposed Methodology
10.4 Result Analysis
10.4.1 ID vs VGS
10.4.2 ID vs VDS
10.4.3 ION/IOFF
10.4.4 Electron Density per Sheet
10.4.5 Current Spectrum
10.4.6 Density Spectrum
10.5 Conclusion
Acknowledgments
References
11. MOSHEMT—Device Background, Materials, and Structures for Different Applications
Ananya Dastidar, Tapas Kumar Patra and Sushanta Kumar Mohapatra
11.1 Classical MOSFETs and their Issues
11.2 HEMT and Its Challenges
11.3 MOSHEMT
11.3.1 Working Principle
11.3.2 MOSHEMT Structure
11.3.3 Substrate
11.3.4 Gate Dielectric
11.3.5 Barrier
11.3.6 Other Layers
11.4 MOSHEMT Structural Engineering
11.4.1 Single Gate and Gate Stack MOSHEMT for RF Applications
11.4.2 Dual/Triple Gate and Recess Gate MOSHEMT for Power Electronic Applications
11.4.3 Asymmetric Gate MOSHEMT for High Frequency Applications
11.4.4 Double-Gate and Double-Channel MOSHEMT for Low Leakage Performance
11.4.5 Novel MOSHEMT Structures
11.5 MOSHEMT for Biosensing Applications
11.5.1 Biosensors
11.5.2 Biomarkers
11.5.3 Performance Metrics of Biosensors
11.5.4 Key Considerations for Biosensor Design
11.5.5 MOSHEMT-Based Biosensors
11.6 Summary
References
12. Quantum Computing and Digital Twins with Development of Semiconductor Field Effect Transistors
Shiromani Balmukund Rahi and Young Suh Song
12.1 Introduction to Quantum Computing: Concept, History, and Principles
12.2 Understanding Digital Twins
12.2.1 Definition and Conceptual Framework
12.2.2 Evolution of Digital Twin Technology
12.2.3 Types of Digital Twins
12.2.4 Challenges and Opportunities in Digital Twin Implementation
12.3 Semiconductor Development: Past, Present, and Future
12.4 Integration of Quantum Computing and Digital Twins
12.4.1 Synergies Between Quantum Computing and Digital Twin Technologies
12.4.2 Case Studies and Use Cases
12.4.3 Challenges and Solutions in Integration
12.4.4 Future Prospects and Possibilities
12.5 Applications and Impact Across Industries
12.6 Ethical and Societal Implications
12.7 Future Directions
12.7.1 Anticipated Developments in Quantum Computing and Digital Twins
12.7.2 Opportunities for Further Research and Collaboration
12.8 Conclusion
Acknowledgment
References
13. Low Voltage Circuit Design with FinFETs
Sarita Yadav and Nitanshu Chauhan
13.1 Introduction
13.2 Advent of FinFETs
13.3 Critical Device-Circuit Co-Design Challenges in Low-Voltage Domain for FinFETs
13.4 Inverter Capacitances in Low-Voltage Region of Operation
13.5 Minimum Supply Voltage for FinFET Logic Gates
13.6 Conclusion
References
14. A Novel Low-Power Approach of 8-Bit Vedic Multiplier Using Reversible Logic Gates
Aruru Sai Kumar, K. Sarangam, P. Ravi Sankar, K. Nishanth Rao and Yashika Gaidhani
14.1 Introduction
14.1.1 Fundamental Reversible Logic Gates
14.2 Literature Survey
14.3 Proposed Methodology
14.3.1 Reversible Full Adder
14.3.2 Ripple Carry Adder
14.3.3 Carry Look Ahead Adder
14.3.4 Proposed Reversible 8-Vedic Multiplier
14.3.4.1 2-Bit Vedic Multiplier
14.3.4.2 4-Bit Vedic Multiplier
14.3.4.3 8-Bit Vedic Multiplier
14.4 Result Analysis
14.5 Conclusion
References
15. 64-Bit High Speed Parallel Prefix Adder Architectures
B. Harish and M.S.S. Rukmini
15.1 Introduction
15.1.1 Introduction to Parallel Prefix Adders
15.1.2 Parallel Prefix Adders
15.2 Implementation of PPA in 64-Bit
15.2.1 Kogge-Stone Adder
15.2.2 Sparse Kogge Stone Adder
15.2.3 Spanning Tree Adder
15.2.4 Brent-Kung Adder
15.2.5 16-Bit Pipelined Brent-Kung Adder
Results and Discussion
Conclusion
References
16. Design and Implementation of High-Performance Adaptive Baud Rate Generator for IoT Applications
B. Harish, N. Jahnavi, M. Brammani, Md. Karishma and N. J. L. S. Manasa
16.1 Introduction
16.1.1 Overview of IoT Applications and Communication Requirements
16.1.2 Importance of Baud Rate Generation in IoT Devices
16.2 Fundamentals of Baud Rate Generation
16.2.1 Definition of Baud Rate
16.2.2 Significance of Baud Rate
16.2.3 Basics of Serial Communication Protocols
16.2.4 Role of Baud Rate Generators in Communication Systems
16.3 Requirements and Challenges in IoT Baud Rate Generation
16.3.1 Specific Demands of IoT Applications on Baud Rate Generation
16.3.2 Challenges in Designing High-Performance Adaptive Baud Rate Generators
16.3.3 Factors Influencing Baud Rate Stability and Accuracy in IoT Environments
16.4 State-of-the-Art Techniques in Baud Rate Generation
16.4.1 Review of Existing Baud Rate Generation Architecture
16.4.2 Adaptive Techniques for Baud Rate Adjustment
16.4.3 Techniques for Power Optimization in Baud Rate Generators
16.5 High-Performance Adaptive Baud Rate Generators
16.5.1 Introduction to Adaptive Baud Rate Generator (Proposed System)
16.5.2 Design Considerations and Constraints
16.5.3 Block Diagram
16.5.3.1 Working Principle of Adaptive Baud Rate Generator
16.6 Results and Discussion
16.6.1 Result for Baud Rate Generator (Existing System)
16.6.2 Result for Adaptive Baud Rate Generator (Proposed System)
16.6.3 Comparison Table
16.7 Future Directions and Challenges
16.8 Conclusion
References
17. Biomedical Applications in VLSI Field
Jyoti Kandpal, Divya Sharma and Ekta Goel
17.1 Introduction
17.2 Role of VLSI in Biomedical Application
17.3 Application
17.4 Conclusion
References
18. Self-Powered Biosensor Field-Effect Transistors
Archana Pandey and Shradha Saxena
18.1 Introduction to Biosensors
18.1.1 Definition and Importance
18.1.2 Overview of Traditional Biosensors
18.2 Field-Effect Transistor (FET)-Based Biosensors
18.2.1 Working Principle
18.2.2 Role of FET Configurations
18.2.3 Sensitivity and Selectivity
18.3 Label-Free Detection with FET Biosensors
18.3.1 Comparison with Traditional Methods
18.3.2 Rapid Response Times
18.3.3 Advantages in Biosensing
18.4 Need for Self-Powering Mechanisms in Biosensors
18.4.1 Challenges in Power Consumption
18.4.2 Limited Operational Lifetimes
18.4.3 Importance of Autonomous Operation
18.5 Energy Harvesting in Biosensor FET Technology
18.5.1 Piezoelectric Mechanisms
18.6 Applications of Self-Powered Biosensor FETs
18.7 Conclusion
References
19. Vertical Tunneling FETs (V-TFETs): A Novel Approach in Biosensing Technology
Sourav Das, Ekta Goel and Kunal Singh
19.1 Introduction
19.2 Types of Biosensors
19.3 Comparison of FET- and TFET-Based Biosensors
19.4 Dielectric Modulation in TFETs: Principle and Design
19.4.1 Working Principle
19.4.2 Design
19.5 Literature Review
19.6 Simulation Methodology for a DM TFET as a Label-Free Biosensor
19.7 Sensitivity Parameters
19.8 Non-Idealities in Dielectric-Modulated Biosensors
19.8.1 Steric Hindrance
19.8.2 Probe Placement
19.8.3 Fabrication Issues
19.9 Impact of Charged Biomolecules on Sensitivity
19.10 Device Architecture and Simulation of Model
19.11 Conclusion
References
20. Micro-Electromechanical System (MEMS) and Field-Effect Transistor (FET)–Coupled Sensors
Shradha Saxena and Archana Pandey
20.1 Introduction to Micro-Electromechanical System (MEMS)–Based Sensor
20.1.1 Definition and Importance of MEMS
20.1.2 Types of MEMS Sensors
20.1.3 Sensing Mechanisms of MEMS Sensors
20.1.3.1 Piezoresistive Sensing Mechanism
20.1.3.2 Capacitive Sensing Mechanism
20.1.3.3 Optical Sensing Mechanism
20.1.3.4 Piezoelectric and Thermal Sensing Mechanisms
20.2 Introduction to Field-Effect Transistor (FET)–Based Sensors
20.2.1 Different Configurations and Working Principle of FET Sensors
20.2.1.1 Top Gate Configuration
20.2.1.2 Side Gate Configuration
20.2.1.3 Extended Gate Configuration
20.2.1.4 Suspended Gate (SG) Configuration
20.2.1.5 Floating Gate (FG) Configuration
20.2.2 Sensing Mechanism in EG-FET Sensors
20.2.3 Limitation of FET-Based Sensors
20.3 Introduction of MEMS-FET Sensor
20.3.1 Advantages of MEMS (Sensing)–FET (Measuring) Sensors
20.3.2 Importance of Suspended Gate (SG) Architecture of FET in MEMS-FET Sensors
20.4 Applications of MEMS-FET Sensors
20.4.1 MEMS-FET–Based Gas Sensors
20.4.2 MEMS-FET–Based Accelerometer Sensors
20.4.3 MEMS-FET Force Sensor
20.4.4 MEMS-FET–Based Microphone
20.5 Self-Powered MEMS-FET Sensors
20.5.1 Self-Powered MEMS-FET–Based Biosensor
20.6 Future Direction and Challenges
20.7 Conclusion
References
21. Memory Design Using Conventional DRAM Unit Cell
Husien Salama, Zina Guesmi, Faouzi Nasri, Billel Smaani, Khalifa Ahmed Salama and Ahmed Gawa
21.1 Introduction
21.1.1 Definition and Basic Principles of DRAM
21.1.2 Historical Background and Development of DRAM Technology
21.1.3 Importance of DRAM in Modern Computing Systems
21.2 Conventional DRAM Unit Cell Structure
21.2.1 DRAM Unit Cell Operation
21.2.2 Overview of DRAM Unit Cell Components
21.2.3 Capacitor and Transistor in a DRAM Unit Cell
21.2.4 Functionality and Operation of a DRAM Unit Cell
21.2.5 Read-and-Write Operations
21.3 Design Considerations for Conventional DRAM
21.3.1 Cell Size and Density in DRAM Design
21.3.2 Read-and-Write Operations in DRAM
21.3.3 Reading Data from a DRAM Cell
21.3.4 Writing Data to a DRAM Cell
21.3.5 Refresh Mechanisms in DRAM
21.4 Challenges and Limitations of Conventional DRAM
21.4.1 Issues with Scaling Down DRAM Technology
21.4.2 Power Consumption and Heat Dissipation Challenges
21.4.3 Prospects and Potential Solutions
21.5 Conclusion and Future Directions
21.5.1 Summary of Key Points in DRAM Design
21.5.2 Emerging Trends in DRAM Technology Research
21.5.3 Potential Advancements and Innovations in DRAM Design
References
22. Ensuring Robustness: Reliability Analysis of 4H-SiC Trench MOSFETs in High-Performance Analog Applications
Ajay Kumar, Mandeep Singh Narula, Neha Gupta, Aditya Jain, Kaushal Kumar and Amit Kumar Goyal
22.1 Introduction
22.2 Device Design and Its Parameters
22.3 Methodology
22.4 Results and Discussion
22.5 Conclusion
References
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